Thickness Impacts of Vacancy Defects in Epitaxial La0.7Sr0.3MnO3 Thin Films Using Slow Positron Beam  

外延生长La0.7Sr0．3MnO3薄膜厚度对缺陷影响的慢正电子分析

作　　者：刘建党[1] 成斌[1] 杜淮江[1] 叶邦角[1] 

机构地区：[1]中国科学技术大学近代物理系,合肥230026

出　　处：《Chinese Journal of Chemical Physics》2010年第6期685-688,746,共5页化学物理学报（英文）

摘　　要：Thickness effects of thin La0.7Sr0.3MnO3 （LSMO） films on （LaAlOa）0.3（Sr2AlTaO6）0.7 substrates were examined by a slow positron beam technique. Doppler-broadening line shape parameter S was measured as a function of thickness and differnt annealing conditions. Results reveal there could be more than one mechanism to induce vacancy-like defects. It was found that strain-induced defects mainly influence the S value of the in situ oxygenambience annealing LSMO thin films and the strain could vanish still faster along with the increase of thickness, and the oxygen-deficient induced defects mainly affect the S value of post-annealing LSMO films.

关 键 词：Thin film Giant magnetoresistance Slow positron beam DEFECT 

分 类 号：O[理学]