GaAs半导体量子箱中电子的斯塔克效应  

Stark effect of electrons in GaAs semiconducting quantum boxes

作　　者：王升[1] 康云[1] 李贤丽[1] 张秀龙[1] 严晓波[1] 

机构地区：[1]东北石油大学电子科学学院,大庆163318

出　　处：《原子与分子物理学报》2010年第6期1150-1156,共7页Journal of Atomic and Molecular Physics

基　　金：黑龙江省教育厅科学技术面上研究项目(11551023)

摘　　要：在有效质量近似下,利用变分法研究了在GaAs半导体量子箱中电子能量的斯塔克效应.结论表明:电场平行于量子箱的中心轴时,斯塔克能移只与量子箱高度有关;电场垂直于中心轴时,斯塔克能移仅仅与它的截面尺寸有关.当电场方向与中心轴夹角为任意角时,斯塔克能移与高度和截面都有关.同时在低场和高场极限下,理论上分析了电场大小和量箱尺寸对斯塔克能移的影响.The Stark shift of the electronic energy levels in GaAs semiconducting quantum box is investigated by the use of variational solutions to the effective-mass approximation. The results show that for the applied electric field perpendicular to the center axis of the quantum box, the Stark shift depends on- ly on the cross section size of the quantum box, while for the applied field parallel with the center axis, the Stark shift depends only upon its height; when the field is neither parallel nor perpendicular to the axis, Stark shift depends upon both the cross sectional sides and the height. Moreover, under the limits of low and high fields, the dependences of both the electric field and the quantum sizes on Stark shift are studied detailedly by the theoretical analysis.

关 键 词：斯塔克效应 量子箱 电场 变分法 量子尺寸 

分 类 号：O471.1[理学—半导体物理]