基于有限元法对发射极指分段结构的多指SiGe HBT的研究  

Research on Multi-Finger SiGe HBT with Emitter Segmented Structure Based on Finite Element Method

作　　者：王任卿[1] 张万荣 金冬月[1] 陈亮[1] 丁春宝[1] 肖盈[1] 孙博韬[1] 赵昕[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《电子器件》2010年第6期680-683,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目资助(60776051;60376033);北京市自然科学基金项目资助(4082007);北京市教委科技发展计划项目资助(KM200710005015;KM200910005001);北京市属市管高校中青年骨干教师培养计划项目资助(102(KB)-00856);北京市优秀跨世纪人才基金项目资助(67002013200301)

摘　　要：针对传统多指SiGeHBT发射极指中心区域和器件中心区域温度较高导致热不稳定问题,提出了新型发射极指分段结构来抑制功率SiGeHBT中心区域的自热效应,提高器件温度分布均匀性。利用有限元软件ANSYS对器件进行建模和三维热模拟,研究器件温度分布的改善情况。结果表明,与传统不分段结构的器件相比,新型分段结构的多指SiGeHBT的指上的温度分布更加均匀、不同指上的温差和集电结结温明显降低,自热效应得到有效抑制,器件的热稳定性得到增强。In order to improve thermal instability caused by higher temperature at center of emitter and center region of device in traditional multi-finger SiGe HBTs,novel emitter segmented structures are proposed to inhibit self-heating effect in center region of device and each finger,and improve temperature distribution uniformity.The finite element method（FEM）software ANSYS is employed to model device and simulate thermal distribution so as to obtain temperature improvement.The results indicate that the temperature distribution on each finger,the temperature difference among fingers and the collector junction temperature of the HBTs with novel emitter segmented structure are improved effectively compared with the HBTs with traditional non-segmented structure.So the self-heating effect is inhibited and thermal stability is enhanced.

关 键 词：SIGE HBT 热模拟 分段结构 自热效应 

分 类 号：TN322.8[电子电信—物理电子学]