应用于微波通信系统新型器件GaN HEMT研究  

Investigation of Novel GaN HEMT for the Application of MCS

作　　者：胡莎[1] 程知群[1] 

机构地区：[1]杭州电子科技大学射频电路与系统教育部重点实验室,杭州310018

出　　处：《电子器件》2010年第6期687-690,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目资助(60776052)

摘　　要：通过自洽求解一维泊松方程,计算了应用于微波通信系统的非故意掺杂AlGaN/AlN/GaN高电子迁移率晶体管(HEMT)的外延层结构参数对器件的二维电子气(2DEG)浓度,跨导等性能的影响。通过理论分析并结合TCAD软件最终确定AlGaN/AlN/GaNHEMT的最佳外延层结构。对栅长0.3μm和栅宽100μm的器件仿真结果表明,器件的最大跨导为418mS/mm,器件的最大电流密度为2300mA/mm,性能良好。An unintentionally doped AlGaN/AlN/GaN HEMT applied to microwave communication system（MCS）is investigated by solving Poisson equations in self-consistent solution and simulation of TCAD software.The influence of two-dimensional electron gas and transconductance on device structure parameter is obtained by calculation.Combining with results of theory analysis and simulation results,the optimization structure Al0.29Ga0.71N/AlN/GaN HEMT is proposed.The simulation results show that the device with gate length of 0.3 μm and gate width of 100 μm has the maximum transconductance of 418 mS/mm and the maximum current density of 2 300 mA/mm.

关 键 词：ALGAN/ALN/GAN HEMT TCAD仿真 非故意掺杂 自洽求解 

分 类 号：TN304.23[电子电信—物理电子学]