云南高校图书馆联盟文献共享服务平台- ALGAN/ALN/GAN

ALGAN/ALN/GAN: 作品数：28被引量：21H指数：3; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：王晓亮栾崇彪王翠梅肖红领马志勇更多>>; 相关机构：中国科学院山东大学中国科学院微电子研究所北京工业大学更多>>; 相关期刊：《Nano-Micro Letters》《微电子技术》《Chinese Physics Letters》《半导体技术》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家教育部博士点基金北京市自然科学基金更多>>

高Al组分AlGaN/AlN/GaN量子级联结构的MOCVD外延研究: 《电子技术（上海）》2024年第1期1-4,共4页吴粤川邓文娟; 国家自然科学基金(61961001)。; 阐述高Al组分差的GaN/AlN/AlGaN量子级联紫外-红外双色探测结构的设计,并用MOCVD外延实现过程。通过MOCVD监控分析GaN/AlN/AlGaN量子级联结构生长状况,发现外延AlGaN层的整体Al组分偏低。随后用SEM观测样品表面形貌存在凸起,从截面测量...; 关键词：电子器件设计量子级联 MOCVD 紫外-红外探测 SEM 高Al组分

Epitaxial Lift-Off of Flexible GaN‑Based HEMT Arrays with Performances Optimization by the Piezotronic Effect被引量：1: 《Nano-Micro Letters》2021年第4期221-233,共13页Xin Chen Jianqi Dong Chenguang He Longfei He Zhitao Chen Shuti Li Kang Zhang Xingfu Wang Zhong Lin Wang; Key-Area Research and Development Program of Guangdong Province(Nos.2020B010172001,2020B010174004);GDAS’Project of Science and Technology Development(No.2018GDASCX-0112);Science and Technology Program of Guangzhou(No.2019050001);National Key Research and Development Program of China(No.2017YFB0404100);National Natural Science Foundation of China(Grant No.11804103);Guangdong Natural Science Foundation for Distinguished Young Scholars(Grant No.2018B030306048).; High-electron-mobility transistors(HEMTs)are a promising device in the field of radio frequency and wireless communication.However,to unlock the full potential of HEMTs,the fabrication of large-size flexible HEMTs is ...; 关键词：AlGaN/AlN/GaN heterojunction Epitaxial lift-off Flexible membrane Two-dimensional electron gas Piezotronic effect

2D study of AlGaN/AlN/GaN/AlGaN HEMTs' response to traps被引量：2: 《Journal of Semiconductors》2019年第2期43-48,共6页A.Hezabra N.A.Abdeslam N.Sengouga M.C.E.Yagoub; In this work, the effects of GaN channel traps and temperature on the performance of AlGaN/AlN/GaN/AlGaN high electron mobility transistors(HEMTs) on Si(111) substrate, were investigated. 2 D simulations carried out u...; 关键词：ALGAN HEMT ALGAN/ALN/GAN structure silicon SUBSTRATE Silvaco TRAPPING effects channel TRAPS

Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors: 《Chinese Physics B》2017年第9期389-395,共7页刘艳林兆军吕元杰崔鹏付晨韩瑞龙霍宇杨铭; Project supported by the National Natural Science Foundation of China(Grant Nos.11174182,11574182,and 61306113);the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20110131110005); The parasitic source resistance（RS） of AlGaN/AlN/GaN heterostructure field-effect transistors（HFETs） is studied in the temperature range 300–500 K. By using the measured RSand both capacitance–voltage（C–V） an...; 关键词：AlGaN/AlN/Ga N heterostructure field-effect transistors（HFETs） parasitic source resistance polarization Coulomb field scattering

Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer:Material Growth and Device Fabrication被引量：1: 《Chinese Physics Letters》2016年第11期99-103,共5页巩稼民王权闫俊达刘峰奇冯春王晓亮王占国; Supported by the National Natural Science Foundation of China under Grant Nos 61204017 and 61334002;the National Basic Research Program of China;the National Science and Technology Major Project of China; AlGaN/GaN high electron mobility transistors （HEMTs） grown on Fe-modulation-doped （MD） and unintentionally doped （UID） GaN buffer layers are investigated and compared. Highly resistive GaN buffers （10^9Ω·cm）...; 关键词：GAN in HEMT is Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer:Material Growth and Device Fabrication of Fe with on

f_T/f_(max)>230/290GHZ的超薄势垒InAlGaN/AlN/GaN HEMTs: 《固体电子学研究与进展》2016年第2期171-,共1页朱广润张凯孔月婵; 氮化镓(GaN)材料具有大的禁带宽度、高击穿场强、高电子迁移率和高电子饱和速度等优良特性,不仅在微波大功率器件领域有广泛的应用,而且在超高频器件领域具备独特优势。南京电子器件研究所采用高极化强度的超薄InAlGaN势垒层形成InAlGaN...; 关键词：微波大功率极化强度电子迁移率势垒层 HZ f_T/f MAX 异质结构击穿场强氮化镓

Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors: 《Chinese Physics Letters》2015年第12期113-116,共4页闫俊达王权王晓亮肖红领姜丽娟殷海波冯春王翠梅渠慎奇巩稼民张博李百泉王占国侯洵; Supported by the Knowledge Innovation Project of the Chinese Academy of Sciences;the National Natural Science Foundation of China under Grant Nos 61204017 and 61334002;the National Basic Research Program of China;the National Science and Technology Major Project of China; Direct-current transfer characteristics of （InGaN）/A1GaN/A1N/GaN heterojunction field effect transistors （HFETs） are presented. A drain current plateau （IDs = 32.0 mA/mm） for Vcs swept from ＋0.7 V to -0. 6 V is...; 关键词：AlGaN Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors INGAN AlN

Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors: 《Chinese Physics B》2015年第11期406-409,共4页杨铭林兆军赵景涛王玉堂李志远吕元杰冯志红; supported by the National Natural Science Foundation of China(Grant Nos.11174182 and 61306113);the Specialized Research Fund for the Doctoral Program of Higher Education,China(Grant No.20110131110005); A simple and effective approach to improve the switching characteristics of AlGaN/AlN/GaN heterostructure field effect transistors （HFETs） by applying a voltage bias on the substrate is presented. With the increase ...; 关键词：AlaN/GaN heterostructure field effect transistors （HFETs） switching characteristics substratebias

Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure: 《Chinese Physics B》2015年第9期399-402,共4页何晓光赵德刚江德生朱建军陈平刘宗顺乐伶聪杨静李晓静张书明杨辉; Project support by the National Natural Science Foundation of China(Grant Nos.61474110,61377020,61376089,61223005,and 61176126);the National Science Fund for Distinguished Young Scholars,China(Grant No.60925017);the One Hundred Person Project of the Chinese Academy of Sciences;the Basic Research Project of Jiangsu Province,China(Grant No.BK20130362); AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas（2...; 关键词：high electron mobility transistor two-dimensional electron gas GAN

Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor: 《Chinese Physics B》2015年第8期534-538,共5页吕元杰冯志红顾国栋尹甲运房玉龙王元刚谭鑫周幸叶林兆军冀子武蔡树军; supported by the National Natural Science Foundation of China(Grant Nos.61306113 and11174182); In this study rectangular AlGaN/AlN/GaN heterostructure field-effect transistors(HFETs) with 22-nm and 12-nm AlGaN barrier layers are fabricated, respectively. Using the measured capacitance–voltage and current–volt...; 关键词：ALGAN/ALN/GAN barrier layer thickness electron mobility polarization Coulomb field scattering

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