MOS沟道和衬底电流的二维分布理论建模  

Theoretical Modeling of TwoDimensional Distributionsof Drain and Substrate Currents in MOSFET'S

作　　者：汤玉生[1,2] 郝跃[1,2] 

机构地区：[1]上海交通大学 [2]西安电子科技大学

出　　处：《电子学报》1999年第7期72-75,共4页Acta Electronica Sinica

基　　金：国防科技预研项目资助

摘　　要：小尺寸ＭＯＳ器件参量具有很强的分布效应，需要二维模型描述．本文从ｙ截面流函数方程求解获得了ＭＯＳ器件中的沟道电流和衬底电流二维分布解析模型．模型是横向场Ｅｙ（ｙ）和纵向场Ｅｘ（ｙ）的函数．二维分布模型载有较充分的物理过程，可以基本反映电流密度的实际分布．模型可应用于与电流路径相关的ＭＯＳ器件特性的研究；特别重要的应用领域是ＭＯＳ热载流子可靠性电子学中的栅电流分布建模．选用深亚微米ＭＯＳ器件的横向场Ｅｙ（ｙ）和纵向场Ｅｘ（ｙ）及ＩＤＳ模型，所建分布模型可应用于该尺寸区器件的沟道电流和衬底电流二维分布的描述．There are strong distribution effects in very small MOSFET's.Their some characteristics should be described by twodimensional models.In this paper,twodimensional analytic distribution models of drain and substrate currents are built by use of flow function equations on y crosssection.The models are dependent on vertical electrical field Ex(y) and horizontal electrical field Ey(y),and include much more physical processes,and show basically the exact distributions of the current densities.These two analytic models can be used in studying the characteristics dependent on current lines,especially,in the field of gate current distribution modeling in MOS's hotcarrier reliability electronics.Using models of Ex(y),Ey(y),IDS and so on in deep submicron MOSFET's,the distribution models in the paper can be applied in these devices.

关 键 词：二维分布模型 流函数方程 热载流子 MOS器件 

分 类 号：TN386.101[电子电信—物理电子学]