辐射加固的JFET/SOS:工艺及γ辐射效应  

Radiation Hardened JFET/SOS Devices:Technique and Gamma Radiation Effects

作　　者：聂纪平[1] 刘忠立[1] 和致经[1] 于芳[1] 李国花[1] 张永刚[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》1999年第8期676-681,共6页半导体学报（英文版）

摘　　要：本文研究了制作 Ｊ Ｆ Ｅ Ｔ／ Ｓ Ｏ Ｓ（蓝宝石上外延硅结型场效应晶体管）的方法，采用扩散形成栅极 ｐ＋ ｎ 浅结以及复合注入的方法形成导电沟道，在不同的工艺条件下可得到增强型和耗尽型器件．通过 Ｃｏ６０源的 γ射线辐射实验发现这种器件具有良好的抗总剂量辐射性能，在 ５ Ｍ ｒａｄ（ Ｓｉ）剂量时阈值电压的变化小于 ０１ Ｖ。A process for fabricating n\|JFET/SOS(junction field\|effect transistors on silicon\|on\|sapphire)has been researched. The gate p\++\|n shallow junction is obtained by diffusion, and the conductive channel is got by a double ion implantation. Both enhancement and depletion mode transistors are fabricated in different technical conditions. Through the experiment of Co 60 γ ray irradiation, we have found that the devices have a good total dose radiation hardness. When the total dose is 5Mrad(Si), the threshold voltage shift is less than 0.1V. The variations of transconductance and leakage current are also little.

关 键 词：JFET/SOS 辐射加固 结型 场效应晶体管 

分 类 号：TN386.6[电子电信—物理电子学]