化学气相沉积法制备GaN纳米结构设计性实验  

Exploring experiment on synthesis of GaN nano-structures by chemical vapor deposition

作　　者：孙言飞[1] 杨玮[1] 简基康[1] 

机构地区：[1]新疆大学物理科学与技术学院,新疆乌鲁木齐830046

出　　处：《物理实验》2011年第2期1-5,共5页Physics Experimentation

基　　金：新疆大学21世纪高等教育教学改革项目(No.XJU2008JGZ08)

摘　　要：在无催化剂辅助条件下,采用化学气相沉积法生长了GaN纳米线.通过调整衬底、NH3气流、生长时间等,实现了半导体GaN纳米线的生长以及形貌调控.用X射线衍射仪和扫描电子显微镜对产物的物相及形貌进行了表征.获得了合成GaN纳米线的优化条件.The morphological evolution of GaN nanostructures grown by catalyst-free chemical vapor deposition process was examined.GaN nanowires were synthesized and their morphologies could be tuned by adjusting the growth parameters including substrates,flow of NH3,and growth duration.The crystalline structure and morphology of as-grown products were characterized by X-ray diffraction and scanning electron microscopy.The optimum synthetic parameters of GaN nanowires were obtained in the experiments.

关 键 词：GAN 纳米线 化学气相沉积法 

分 类 号：O782[理学—晶体学]