PZT薄膜的深槽反应离子刻蚀研究  

Study on Deep Reactive Ion Etching of PZT Thin Film

作　　者：张娅[1] 杨成韬[1] 翟亚红[1] 赵鹏[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2011年第1期133-135,共3页Piezoelectrics & Acoustooptics

摘　　要：研究了锆钛酸铅(PZT)薄膜的深槽反应离子刻蚀(DRIE)技术。首先,对比了3种工艺气氛条件下(SF6/Ar、CF4/Ar和CHF3/Ar)刻蚀PZT的效果。实验结果表明,3种工艺气氛下,刻蚀速率都随功率的增加而增加。相同功率下,SF6/Ar的刻蚀速率最高;而CHF3/Ar刻蚀PZT的图形形貌最好,对光刻胶的选择比也最好。最后得出了优化的工艺条件为采用CHF3/Ar,射频(RF)功率为160 W,气体流量比为3∶4(CHF3∶Ar=30 cm3/min:40 cm3/min)时,PZT薄膜的刻蚀速率为9 nm/min,光刻胶的选择比为7。The deep reactive ion etching technique of lead zirconate titrate（PZT） thin films was studied in this work.First,the influences of three kinds of different etching gases（such as SF6/Ar、CF4/Ar and CHF3/Ar）on the etching effects were analyzed.The experimental results showed that the etching rate increased with RF power increasing at the three kinds of different etching gas.Under the same power,the highest etching rate of PZT has been obtained using SF6/Ar as the reactive gas;the best surface morphology of PZT and good selectivity ratio has been obtained using CHF3/Ar as reactive gas.The optimal process conditions for PZT etching have been obtained.At the condition of 160 W of RF power,the flow rate ratio of 3∶4（CHF3∶Ar=30 cm3/min∶40 cm3/min）,the etching rate of PZT thin film was about 9 nm/min,and the selectivity ratio of photoresist was 7.

关 键 词：深槽反应离子刻蚀(DRIE) 锆钛酸铅(PZT) 刻蚀速率 

分 类 号：TN405[电子电信—微电子学与固体电子学]