3～5GHz超宽带并联负反馈低噪声放大器的设计  

Design of Low Noise Amplifier with Shunt Feedback for 3-5 GHz UWB Receiver

作　　者：王巍[1] 彭能[1] 王颖[1] 韩冰[1] 唐政维[1] 阮巍[1] 周前能[1] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065

出　　处：《微电子学》2011年第1期10-14,共5页Microelectronics

摘　　要：设计了一种用于3～5 GHz MB-OFDM超宽带接收机射频前端的CMOS低噪声放大器(LNA)。分析了RC电阻反馈式低噪声放大器的结构,针对其存在的噪声大、增益低等问题,提出一种改进电路结构;增加了一个源极电感,以克服上述电路的不足。采用TSMC 0.18μm RFCMOS工艺,进行设计和仿真。仿真结果表明:改进结构在保证良好的输入输出匹配和较好线性度的前提下,提高了电路的噪声性能,在整个频带范围内,噪声系数小于1.9 dB;同时,增益也达到11 dB左右。A CMOS low noise amplifier（LNA） with shunt feedback for RF front-end of 3-5 GHz MB-OFDM ultra wideband（UWB） receiver was designed.In order to get over deficiencies,such as large noise figure and low gain,in LNA with RC resistor feedback topology,an improved LNA architecture with an additional source inductor was proposed.The LNA circuit was designed and simulated based on TSMC＇s 0.18 μm standard RF CMOS process.Simulation results showed that the proposed structure improved noise performance of the circuit,which had a noise figure less than 1.9 dB and a power gain of about 11 dB.

关 键 词：超宽带 低噪声放大器 CMOS 并联反馈 

分 类 号：TN722.3[电子电信—电路与系统]