单晶硅太阳电池背场欧姆接触的改善研究  

THE IMPROVEMENT RESEARCH ON BACK SURFACE OMIC CONTACT OF CRYSTLINE SILICON SOLAR CELLS

作　　者：李幼真[1] 周继承[1] 黄迪辉[1] 赵保星[1] 

机构地区：[1]中南大学物理科学与技术学院,长沙410083

出　　处：《太阳能学报》2011年第1期41-44,共4页Acta Energiae Solaris Sinica

基　　金：湖南省科技计划项目(2010JT4038)

摘　　要：采用磁控溅射在扩散工艺后的单晶硅片背面沉积了铝膜,对样品在600～900℃之间进行了快速热处理,利用四探针电阻测试仪、扫描电镜对热处理前后样品的电阻率、形貌等进行了表征,用半导体参数测试仪测量了样品的I-V曲线,计算了铝膜与硅片的接触电阻,并同步与印刷铝浆料样品进行了对比,研究表明,与丝网印刷工艺相比,溅射铝膜具有均匀细腻、电阻率低、接触电阻小等优点。Althin films were magnetron sputtered on CZ silicon wafers after diffusion process. The samples were rapid thermal treated at the temperatures varied from 600℃ to 900℃. Four probe resistance measurer and SEM were employed to characterize the resistance and morphologies, the I-V properties were analyzed by semiconductor parameter measurer, the contact resistance between Al thin films and silicon was calculated by using transmission model. Compared with the screen printed samples, sputtering Al films is more uniform, with lower contact resistance than printed samples.

关 键 词：欧姆接触 磁控溅射 晶硅太阳电池 铝背场 

分 类 号：TK514[动力工程及工程热物理—热能工程]