化学机械抛光中的颗粒技术  

Particle Technology in Chemical Mechanical Planarization

作　　者：Kalyan S. Gokhale Brij M. Moudgil 涂佃柳（译） 刘晓斌（译） 

机构地区：[1]Department of Materials Science and Engineering and Particle Engineering Research Center, University of Florida,北京101601 [2]中国电子科技集团公司第四十五研究所

出　　处：《电子工业专用设备》2011年第2期1-7,共7页Equipment for Electronic Products Manufacturing

基　　金：佛罗里达大学微粒研究中心;国家科学基金EEC-94-02989;国家卫生研究所基金P20RR020654;微粒研究中心的合作伙伴的资助.

摘　　要：多层金属化是集成芯片以摩尔定律的速度更替的重要工艺手段。在多层金属化中,平坦的晶圆表面对每道工序的成功完成都是非常必要的,而化学机械抛光工艺能在每道工序之前将晶圆表面抛光。化学机械抛光主要是通过使用颗粒研浆去除材料来实现晶圆抛光。除了研浆本身的化学性质外,研浆的效果也受研磨颗粒性质的影响。如果我们能够更好的理解研磨颗粒的特性和颗粒研磨机制,将会有助于提高化学机械抛光效果。本文主要讨论了颗粒形成、研浆稳定性、颗粒润滑以及化学机械抛光中颗粒设计中的最新进展。In order to keep pace with Moore＇s law,multilevel metallization has become the process of choice.Having a planar wafer surface before every successive step in multilevel metallization is important.The Chemical Mechanical Planarization（CMP） process is used in the semiconductor industry to achieve planar surfaces at every step of the multi-level metallization.In CMP,planarization is achieved primarily due to material removal by the use of abrasive particle slurries.In addition to the slurry chemistry,slurry performance is also dictated by the properties of the abrasive particles.A better understanding of the properties of abrasive particles and particle abrasion mechanisms will lead to better CMP.Some of the challenges in particle modeling,slurry stabilization and particle induced lubrication as well as recent developments in engineered particles for CMP are discussed in this paper.

关 键 词：CMP 多层金属化 研磨颗粒 设计 

分 类 号：TN305.2[电子电信—物理电子学]