Si基3C-SiC反向外延的选择生长和残余应力研究  

Study on selective reverse epitaxial growth and its residual stress of 3C-SiC/Si

作　　者：杨翰飞[1] 杨治美[1] 廖熙[1] 龚敏[1] 孙小松[2] 

机构地区：[1]四川大学物理科学与技术学院四川省微电子重点实验室,成都610064 [2]四川大学材料科学与技术学院,成都610064

出　　处：《四川大学学报（自然科学版）》2011年第1期121-125,共5页Journal of Sichuan University(Natural Science Edition)

摘　　要：采用一种新的LPCVD方法在Si衬底上通过SiO_2作为掩蔽层,进行3C-SiC的反向外延的选择性生长.TEM,AFM和XRD结果显示3 C-SiC沿(111)面成功实现了较高质量的外延选择生长,其界面清晰,掩蔽良好.生长出的3C-SiC薄膜为织构晶体,单晶性良好.残余应力测试表明3C-SiC薄膜晶格发生压应变,选择性生长区域的残余应力显著降低.据此结果建立了残余应力的形成机制.A new LPCVD method was used to realize selective reverse epitaxial growth of 3C-SiC on Silicon wafer masked by SiO2. The results of TEM, AFM and XRD indicated that well crystallized 3C-SiC （111） films with clear interface and relatively high quality were achieved. The compressive stress was observed in the 3C-SiC films. Compared with 3C-SiC epitaxy on bared Si, the residual stress in the selective epitaxy decreased significantly. Based on the results, the mechanism of the residual stress was formed.

关 键 词：立方碳化硅 选择生长 掩蔽层 衍射峰位置 残余应力 

分 类 号：TN304.054[电子电信—物理电子学]