GaN薄膜表面形貌与AlN成核层生长参数的关系  

Relation between Surface Morphology of GaN Film and Growth Parameters of AlN Nucleation Layer

作　　者：倪金玉[1] 李忠辉[1] 李亮[1] 董逊[1] 章咏梅[1] 许晓军[1] 孔月婵[1] 姜文海[1] 

机构地区：[1]单片集成电路与模块国家级重点实验室南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2011年第1期9-12,共4页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61076120和60807038)

摘　　要：采用金属有机物化学气相淀积技术生长了以AlN为成核层的GaN薄膜,研究了成核层生长时三甲基铝(TMAl)流量对最终GaN薄膜表面形貌的影响。研究结果表明,高质量的GaN薄膜只能在高TMAl流量下获得,采用充足的TMAl源才能形成满足需要的AlN成核点,这是生长高质量GaN薄膜的一个先决条件。In this paper,a batch of GaN films with AlN nucleation layer was grown by metalorganic chemical vapor deposition.The effect of trimethylaluminum（TMAl） flux of AlN nucleation layer on the surface morphology of GaN film was investigated.The results showed that high quality GaN film was obtained with high TMAl flux condition.It is considered that adequate TMAl flux is necessary to form required AlN nucleation sites,which is a requisite for the growth of the high quality GaN film.

关 键 词：氮化镓 金属有机物化学气相淀积 氮化铝成核层 

分 类 号：TN304.2[电子电信—物理电子学]