异质栅单Halo沟道SOI中隐埋层对器件特性的影响  

Impact of Buried Oxide Layer on Characteristics of Dual Material Gate SOI MOSFETs with Single Halo

作　　者：黄玮[1] 钟传杰[1] 

机构地区：[1]江南大学信息工程学院,江苏无锡214122

出　　处：《固体电子学研究与进展》2011年第1期48-52,共5页Research & Progress of SSE

摘　　要：研究异质栅单Halo沟道SOI MOS器件的隐埋层中二维效应对器件特性,如电势分布、阈值电压等的影响,仿真结果表明,隐埋层中的二维效应会引起更明显的SCE及DIBL效应。在考虑隐埋层二维效应的基础上,提出了一个新的二维阈值电压模型,能较好地吻合二维器件数值模拟软件Medici的仿真结果。In this paper,the study of the impact of the two-dimensional effects in a buried oxide layer on device characteristics is presented,such as potential distribution,and threshold voltage.The simulation results indicate that the short-channel effect and drain-induced barrier lowering effect become more serious due to the two-dimensional effect.With taking the two-dimensional effect in a buried oxide layer into account,a novel two-dimensional analytical model is proposed,and the calculated results are in good agreement with those from two-dimensional device simulator of Medici.

关 键 词：异质栅 单Halo 绝缘体上的硅 二维效应 阈值电压 

分 类 号：TN386[电子电信—物理电子学]