P波段450W硅LDMOS脉冲功率器件的研制  

Research and Development of P Band 450 W Pulse Power Silicon LDMOS

作　　者：王佃利[1] 李相光[1] 严德圣[1] 丁小明[1] 刘洪军[1] 钱伟[1] 蒋幼泉[1] 王因生[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2011年第1期60-64,共5页Research & Progress of SSE

摘　　要：报道了P波段450 W硅LDMOS器件的研制结果。所研制器件采用沟槽技术实现背面源结构,采用场板技术提高击穿电压并降低栅漏电容,采用多晶硅金属硅化物结构降低栅阻。研制结果表明,在漏源工作电压36 V,脉宽20 ms,占空比35.7%的测试条件下,485～606 MHz全带内输出功率达到450 W,增益大于18 dB,效率大于60%。A research and development results of P band 450 W pulse power silicon LDMOS are reported.By using trenched-sinker technology to realize backside source,field plate technology to raise drain-source breakdown voltage and reduce feedback capacitance,polysilicon and silicide complex structure to reduce gate resistance,the measured results show that the developed device can deliver 450 W output power over a 485～606 MHz band at 20 ms pluse width,35.7% duty cycle,36V operate voltage,with more than 18 dB power gain and 60% drain efficiency.

关 键 词：硅 横向双扩散金属氧化物场效应晶体管 脉冲 背面源 场板 硅化钴 

分 类 号：TN385[电子电信—物理电子学] TN386.1