双波长InGaN/GaN多量子阱发光二极管的光电特性  

Optoelectronic Properties of Dual-wavelength InGaN/GaN Multi-quantum Well Light-emitting Diodes

作　　者：陈献文[1] 吴乾 李述体[1] 郑树文[1] 何苗[1] 范广涵[1] 章勇[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广州510631 [2]广州鸿利光电股份有限公司,广州510800

出　　处：《光子学报》2011年第2期190-193,共4页Acta Photonica Sinica

基　　金：教育部留学回国人员科研启动基金;广东省教育部产学研结合项目(No.2009B090300338);广东省自然科学基金(No.8521063101000007);华南师范大学学生课外科研重点课题项目(No.10GDKC07)资助

摘　　要：为了实现高显色指数和流明效率的白光发光二极管,在(0001)蓝宝石衬底上利用金属有机化学气相沉积系统,生长了双波长发射的InGaN/GaN多量子阱发光二极管结构.通过对不同In组分含量的双波长发射发光二极管结构的光致发光和电致发光性能进行分析,结果表明In组分含量对双波长发射发光二极管的光致发光谱的稳定性及发光效率有重要影响.此外,用双蓝光发射的芯片来激发YAG:Ce荧光粉实现了高显色指数白光发射.In order to realize preferable white light-emitting diodes with high color rendering index and optimized luminous efficiency,white InGaN/GaN multi-quantum-well dual-wavelength light-emitting diodes（LEDs） were grown on（0001）-oriented sapphire substrates by metal-organic chemical vapor deposition（MOCVD）.Photoluminescence and electroluminescence properties of dual-wavelength LEDs with different In content were also studied.The experimental results indicated that In component plays a critical role on stability for electroluminescence spectrum and luminous efficiency of the dual-wavelength LED structures.In addition,YAG∶Ce phosphor-converted white light emission with high color rendering index was achieved using dual-blue emitting active regions.

关 键 词：INGAN/GAN多量子阱 双波长 发光二极管 金属有机化学气相沉积 

分 类 号：O433.4[机械工程—光学工程]