一种采用Li_3N掺杂电子注入层的底发射倒置结构OLED的制备  

Fabrication of Inverted Bottom Organic Light-emitting Device with Li_3N n-type Doping Electron Injecting Layer

作　　者：张睿[1] 李传南[1] 李涛[1] 崔国宇[1] 侯晶莹[1] 赵毅[1] 刘式墉[1] 

机构地区：[1]吉林大学电子科学与工程学院集成光电子学国家重点联合实验室,长春130012

出　　处：《光子学报》2011年第2期199-203,共5页Acta Photonica Sinica

基　　金：国家重点基础研究发展计划(No.2010CB327701);吉林省科技厅支撑计划重点项目(No.20093056)资助

摘　　要：采用Li3N掺杂电子注入层Alq3∶Li3N,制作了一种结构为ITO/Alq3Alq3∶Li3N/Alq3/NPB/MoO3/Al的倒置底发射有机发光器件.其中ITO玻璃作为透明阴极,金属Al作为顶部阳极,在ITO阴极与电子传输层之间加入Li3Nn型掺杂层,改善了该器件的电子注入和传输能力;在Al阳极与空穴传输层之间加入MoO3缓冲层,降低了Al阳极与NPB之间较大的空穴注入势垒,改善了空穴注入能力.实验表明:此结构的倒置底发射有机发光器件性能可达到传统结构的常用有机发光器件如ITO/NPB/Alq3/LiF/Al的性能,完全可以满足非晶硅薄膜晶体管有源有机发光器件中驱动电路的匹配及性能要求.The fabrication of a kind of inverted bottom organic light-emitting device was reported,using Li3N doping layer Alq3∶Li3N as electron injecting layer.The structure of this device is ITO/Alq3∶Li3N/Alq3/NPB/MoO3/Al.In this device,ITO glass was used as transparent cathode,Al as top anode,the Li3N n-type doping layer Alq3∶Li3N was inserted the ITO cathode and the electron transporting layer,the electron injecting and transporting ability of this device was improved.And 10nm MoO3 was inserted as the buffer layer between Al anode and hole transporting layer NPB,and the hole injecting ability of this device was enhanced.Experiments show that the device with this structure performs as well as the organic light-emitting device with traditional structure such as ITO/NPB/Alq3/LiF/Al.This device can be used in amorphous silicon thin film transistor active matrix organic light-emitting device display.

关 键 词：有机发光器件 倒置底发射结构 Li3N N型掺杂 势垒 

分 类 号：TN873.3[电子电信—信息与通信工程]