InAs/GaAs和InAs/InxGa1-xAs/GaAs纳米线异质结构的生长研究  

Growths of InAs/GaAs and InAs/In_xGa_(1-x)As/GaAs nanowire heterostructures

作　　者：叶显[1] 黄辉[1] 任晓敏[1] 郭经纬[1] 黄永清[1] 王琦[1] 张霞[1] 

机构地区：[1]北京邮电大学,信息光子学与光通信教育部重点实验室,北京100876

出　　处：《物理学报》2011年第3期421-426,共6页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2010CB327600);“111”计划项目(批准号:B07005);国家高技术研究发展计划(批准号:2009AA03Z405,2009AA03Z417);中央高校基本科研业务费专项资金(批准号:BUPT2009RC0409,BUPT2009RC0410)资助的课题~~

摘　　要：利用金辅助金属有机化学气相沉淀法(MOCVD)在GaAs(111)B衬底上分别制备了InAs/GaAs和InAs/InxGa1-xAs/GaAs(0≤x≤1)纳米线异质结构.实验结果显示,直接生长在GaAs纳米线上的InAs纳米线生长方向杂乱或者沿着GaAs纳米线侧壁向衬底方向生长,生长的含有InxGa1-xAs组分渐变缓冲段的InAs/InxGa1-xAs/GaAs三段式纳米线异质结构在轴向上串接生长而形成双异质结构.通过插入三元化合物InxGa1-xAs渐变缓冲段可以有效的克服界面能差异和晶格失配带来的负面影响,提高纳米线的晶体质量和生长可控性.InAs /GaAs and InAs /InxGa1-x As /GaAs nanowire heterostructures are grown by metal organic chemical vapor deposition via Au-assistant vapor-liquid-solid mechanism. We find that the InAs nanowires grow directly on GaAs nanowires in a random way,or they grow along the sidewall of the GaAs nanowires,and thet InAs nanowires grow vertically on GaAs nanowires by using an InxGa1-xAs （0≤x≤1） buffer segment. It can be concluded that the influences of crystal lattice mismatch and difference in interfacial energy can be eliminated by inserting a ternary compound semiconductor buffer segment,thereby improving the crystal quality and the capability to control the growth of nanowire heterostructure.

关 键 词：纳米线异质结构 INXGA1-XAS 组分渐变缓冲层 金属有机化学气相沉淀法 

分 类 号：TB383.1[一般工业技术—材料科学与工程]