空穴注入控制型横向绝缘栅双极晶体管  

A Controlled Hole Injection Lateral Insulated Gate Bipolar Transistor

作　　者：杨健[1] 方健[1] 李肇基[1] 

机构地区：[1]电子科技大学微电子所,四川成都610054

出　　处：《微电子学》1999年第4期292-296,共5页Microelectronics

基　　金：国家"九五"军事预研项目;国防基金

摘　　要：提出了空穴注入控制型横向绝缘栅双极晶体管（ Ｃ Ｉ Ｌ Ｉ Ｇ Ｂ Ｔ），它可以有效地控制高压下阳极区空穴注入，提高器件的闭锁电压。通过对阳极区反偏 ｐ＋ ｎ＋ 结击穿电压 Ｂ Ｖ Ｚ、取样电阻 Ｒ Ａ 和阳极区结深的优化，提高了 Ｃ Ｉ Ｌ Ｉ Ｇ Ｂ Ｔ 的抗闭锁能力，降低了其导通压降，并获得了初步实验结果。A controlled hole injection lateral insulated gate bipolar transistor(CI LIGBT)is proposed,which can effectively control the hole injection during its on state with high anode voltage,and improve its latch up voltage.By optimizing the breakdown voltage BV Z of the p +n + junction,the sampling resistance R A and the junction depth of anode region,latch up immunity of the CI LIGBT is enhanced and its on state voltage is reduced.

关 键 词：横向绝缘栅双极晶体管 智能功率集成电路 功率器件 

分 类 号：TN322.8[电子电信—物理电子学] TN43