硅圆片表面活化工艺参数优化研究  

Parameter optimization of surface activation on silicon wafer

作　　者：聂磊[1] 阮传值[2] 廖广兰[2] 史铁林[2] 

机构地区：[1]湖北工业大学湖北省现代制造质量工程重点实验室,湖北武汉430068 [2]华中科技大学机械科学与工程学院,湖北武汉430074

出　　处：《功能材料》2011年第3期467-470,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50805061;50975106);国家重点基础研究发展计划(973计划)资助项目(2009CB724204)

摘　　要：利用正交实验,对单晶硅表面活化工艺中重要参数对活化效果的影响进行了研究,并优化了工艺。实验针对RCA活化溶液处理工艺的特点,选择溶液配比、处理时间和温度3个重要因素为研究对象,以30%盐水为测试液,以接触角为指标,评估了这3个因素对活化效果的影响规律。对实验结果的分析表明,在此三因素中,活化温度与活化效果的关系最密切,活化液配比和活化时间的影响依次减弱。根据实验分析的结果,得到优化的工艺。利用此优化工艺进行了硅圆片键合实验,其结果表明此工艺能够实现无明显界面缺陷的直接键合。The effects of important process parameters in surface activation of monocrystal silicon wafer were investigated by orthogonal experiments and the activation process was optimized.The three parameters,volume ratio of activation solution,processing time and temperature,were selected as investigation objects.Based on the characters of surface activation process,the influences on surface activation of these parameters were estimated by the means of contact angle measurement experiments and 30% salt water was the testing solution.The experimental results were analyzed which showed that among the three parameters,activation temperature had the most intimate relationship with surface activation result.And the volume ratio of activation solution had more obvious effect than processing time.This optimized process was used in silicon direct bonding and the results of bonding experiment indicated the void-free bonding could be realized by this process.

关 键 词：单晶硅 表面活化 直接键合 参数优化 

分 类 号：TN405[电子电信—微电子学与固体电子学]