液相外延用碲镉汞母液晶锭的组分均匀性  

Composition Uniformity of HgCdTe Bulk Material Used as Epitaxial Solution

作　　者：陈建才[1] 孔金丞[1] 马庆华[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外》2011年第3期19-22,共4页Infrared

摘　　要：开展了液相外延用碲镉汞母液晶锭的合成工艺优化研究。通过优化合成温度、合成时间、摇炉速率和淬火工艺,有效提高了碲镉汞晶锭的纵向组分均匀性。用改进工艺后合成的碲镉汞母液晶锭生长了28个外延薄膜样品,其组分平均偏差为0.95%,满足第二代红外焦平面探测器研制对探测器材料组分均匀性的要求。The composition uniformity of a HgCdTe bulk material used as liquid-phase epitaxial solution was studied.By optimizing the compound temperature,compound time,furnace swing frequency and quench process,the longitudinal composition uniformity of the HgCdTe bulk material was improved greatly.28 epitaxial film samples were grown by using the HgCdTe bulk material compounded after the growth process was modified.They had a average composition uniformity of 0.95%which met the fabrication requirement of the second generation infrared focal plane arrays.

关 键 词：液相外延 碲镉汞母液 组分均匀性 

分 类 号：TN304.26[电子电信—物理电子学]