锑化物HEMT器件研究进展  

Research progress in antimonide-based high electron mobility transistors

作　　者：李彦波[1] 刘超[1] 张杨[1] 曾一平[1] 

机构地区：[1]中国科学院半导体研究所材料科学中心,北京100083

出　　处：《功能材料与器件学报》2011年第1期29-35,共7页Journal of Functional Materials and Devices

基　　金：国家自然科学基金资助项目(60876004)

摘　　要：由于锑化物具有高电子迁移率和高电子饱和漂移速度等优越的材料性能,锑化物高电子迁移率晶体管(HEMT)微电子器件在制造新一代超高速、超低功耗电子器件和集成电路应用方面极具潜力,有很大的发展空间。本文中对锑化物HEMT的器件结构、器件结构改进、器件性能和应用等方面进行了评述,并指出了当前需要解决的关键问题及其广阔的发展前景。Because antimonide-based compound semiconductors have excellent material performances such as high electron mobility and high electron saturation velocity,they have great potential and development space in the manufacture of the new generation of ultra-high speed,ultra-low power microelectronic devices and integrated circuits.Research progresses in device structures,device performances and applications of antimonide-based HEMTs are introduced and the existing problems of antimonide-based HEMTs and their vast potential for future development are also pointed out.

关 键 词：锑化物半导体 高电子迁移率晶体管 HEMT ABCS 研究进展 

分 类 号：TN304.2[电子电信—物理电子学]