低能离子注入在Vc高产菌株选育中的应用  

The Application of Low Energy lon lmplantation in Breeding of High Yield Vc Strains

作　　者：虞龙[1] 许安[1] 王纪[1] 余增亮[1] 

机构地区：[1]中国科学院等离子体物理研究所,合肥230031

出　　处：《激光生物学报》1999年第3期217-220,共4页Acta Laser Biology Sinica

基　　金：国家计委"九五"重点攻关项目

摘　　要：对低能离子注入 Ｖｃ 生产菌的诱变效应进行研究。结果表明，离子注入 Ｖｃ 生产菌能获得较高的突变率和较广 的突变谱。比较了 Ｈ＋ 、 Ｎ＋ 、 Ａｒ＋ 注入 Ｖｃ 生产菌的差异，确定了最佳诱变剂量。由此筛选出４ 株 Ｖｃ高产菌，其糖酸克分子转化率达 ９４％ 。目前已通过工业生产试验，并为企业带来显著的经济效益，同时也为工业微生物的选育提供了一条全新的途径。Thc mutagenic effects of Vc strains by low encrgy ion implantation have been studied.The results show that the Ve strains by ion implantation can achieve higher rate of mutation and wide mutational spectrum.Compared with differences among Vc strains implanted by H +、N +、Ar +,the best mutation dose was determined.Four high yield Vc strains have been bred from this.Their conversion rates from Lsorbose to 2KLG reached about 95mol%.At present,the experiments of industrial production have been passed.It brings great economic benefit to enterprises and offers a new way for the breeding of industrial microbes.

关 键 词：离子注入 生产菌 突变 选育 维生素C 

分 类 号：O53[理学—等离子体物理] TQ466.3[理学—物理]