用溶胶-凝胶方法制备Tb^(3+)掺杂的硅基发光材料  

PREPARATION OF Tb 3+ \|ION\|DOPED Si\|BASED LIGHT\|EMITTING MATERIALS WITH SOL\|GEL METHOD 

作　　者：谢大徑 吴瑾光[1] 马刚[1] 闫文飞[1] 周维金[1] 徐光宪[1] 徐端夫[2] 陶靖[2] 秦国刚[3] 

机构地区：[1]北京大学稀土材料化学及应用国家重点实验室,北京100871 [2]中国科学院化学研究所,北京100080 [3]北京大学物理系,北京100871

出　　处：《物理学报》1999年第9期1773-1780,共8页Acta Physica Sinica

基　　金：国家重点基础研究发展规划;国家自然科学基金

摘　　要：报道了用溶胶凝胶方法制备 Ｔｂ３ ＋ 掺杂的硅基发光材料．并用荧光光谱、傅里叶变换红外光谱、原子力显微镜、差热分析和热重测定等方法研究了材料的制备规律．实验结果表明该制备方法在５００ ℃的退火条件下即可以使 Ｔｂ３ ＋ 掺杂到硅基发光材料产生室温下的５４５ ｎ ｍ荧光；稀土离子的掺杂浓度可任意调节，最佳浓度为５ ×１０１９／ｃｍ ３ ；薄膜在微米量级上有较好的平整度．用该方法在改善材料的掺杂浓度、发光性能及降低材料的退火温度方面有特殊的优越性．By sol\|gel process and appropriate heat treatment,Tb 3+ \|doped light\|emitting films were prepared on the silicon bases.The structural changes of the xerogels and the fluorescence properties of the Tb 3+ ions doped were studied by photoluminescence,Fourier transformed infrared spectroscopy,atom force microscope,differential thermal analysis and thermal gravimetry analysis methods.The results show that the films doped with Tb 3+ ions can produce photoluminescence at 545?nm at room temperature after 400℃ heating\|treatment,and have good properties in 10 -6 ?m level.The concentration of the Tb 3+ ions doped reached 10 19 /cm 3. PACC: 7855; 8120tion process. Therefore there exists a maximum of Ω h. It is pointed out that dimensionless angular momentum a \-* is more appropriate to describe the spinning state of a central black hole of an accretion disk than angular momentum J and angular velocity Ω h. PACC: 9760L; 0420

关 键 词：溶胶凝胶法 掺杂 发光材料 硅基 稀土离子 

分 类 号：O482.31[理学—固体物理] TN104.3[理学—物理]