分子束外延HgCdTe材料的光致发光研究  

Photoluminescence Study of MBE Hg 0.68 Cd 0.32 Te Epilayers

作　　者：姬荣斌[1] 常勇[1] 王善力[1] 杨建荣[1] 何力[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室

出　　处：《光学学报》1999年第9期1284-1288,共5页Acta Optica Sinica

摘　　要：报道了分子束外延生长 Ｈｇ０．６８ Ｃｄ０．３２ Ｔｅ 材料的光致发光测量结果。研究了原生样品和退火处理样品、以及氮离子注入样品的低温光致发光特征。对光致发光的测试结果进行拟合得到的禁带宽度， 与用红外透射谱得到的薄膜禁带宽相近； 其半峰宽和带尾能量较小， 显示了较高的薄膜质量。样品经过退火后带尾能量降低，By using photoluminescences (PL), the molecular beam epitaxy (MBE) grown  Hg 1-x Cd x Te (x=0.32) epilayers are studied. The PL measurement shows a strong near band edge emission peak with an FWHM of 5 meV and a small broadening energy, E 0(4.2 K)=1.3 meV, which indicates the high quanlity was obtained. Comparing the results of as grow and annealing sample shows that annealing sample has a better crystal quality than the as grow sample.

关 键 词：薄膜 光致发光 分子束外延 汞镉碲 

分 类 号：TN213[电子电信—物理电子学]