新型微电子技术电离辐射总剂量效应面临的挑战  

Future Challenges in Total Ionizing Dose for Advanced CMOS Technologies

作　　者：郭红霞[1] 王伟[1] 张凤祁[1] 罗尹虹[1] 张科营[1] 赵雯[1] 

机构地区：[1]西北核技术研究所,西安710024

出　　处：《核电子学与探测技术》2011年第1期115-119,共5页Nuclear Electronics & Detection Technology

摘　　要：随着器件特征尺寸的不断减小,在器件结构和工艺上采取了新的措施。分析了STI(shallo★trench isolation)隔离导致器件电离辐射总剂量效应的损伤机理;对不同工艺集成电路的抗总剂量TII(Total Ionizing Dose)能力进行了比较分析;对近来比较关注的重离子引起的微剂量效应进行了介绍;最后对可能替代体硅器件的新型器件总剂量效应能力进行了预估。Total ionizing dose is complexity in analysis. With features size downscaling the Structure and technology of device have changed a lot . The mechanism of damage for STI induced by ionizing radiation is discussed. Technology variations in TID response are compared. A growing concern for micro dose by individual energetic particles is introduced. Total dose effects in CMOS replacement technologies are predicted.

关 键 词：浅槽隔离 总剂量效应 微剂量效应 

分 类 号：TN305.94[电子电信—物理电子学]