含Ni-Al阻挡层硅基BiFe_(0.95)Mn_(0.05)O_3铁电电容器的结构及物理性能  

Structure and Physical Properties of Si-based BiFe_(0.95)Mn_(0.05)O_3 Ferroelectric Capacitor Using Ni-Al as the Barrier Layer

作　　者：陈剑辉[1] 刘保亭[1] 魏大勇[1] 王宽冒[1] 崔永亮[1] 王英龙[1] 赵庆勋[1] 韦梦袆 

机构地区：[1]河北大学物理科学与技术学院,保定071002

出　　处：《人工晶体学报》2011年第1期33-37,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(60876055;11074063)资助项目;河北省自然科学基金(E2008000620)资助项目;河北省应用基础研究计划重点基础研究项目(10963525D);高等学校博士点基金(20091301110002)

摘　　要：以Ni-Al为阻挡层,在Si衬底上构架了SrRuO3(SRO)/BiFe0.95Mn0.05O3(BFMO)/SRO异质结电容器。X射线衍射(XRD)分析表明:Ni-Al阻挡层为非晶结构,BFMO薄膜为具有良好结晶质量的多晶结构。在5 kHz测试频率下,SRO/BFMO/SRO电容器呈现饱和的电滞回线。实验发现,SRO/BFMO/SRO铁电电容器具有良好的抗疲劳性能。漏电机制研究表明,外加电场小于210 kV/cm时,SRO/BFMO/SRO电容器满足欧姆导电机制,在电场大于210kV/cm时,满足空间电荷限流传导机制。SrRuO3（SRO）/BiFe0.95Mn0.05O3（BFMO）/SRO heterostructure capacitors were fabricated on Si substrates using Ni-Al as the barrier layer between Si and SRO.X-ray diffraction（XRD） reveals that the Ni-Al barrier is amorphous,while well-crytallinized BFMO film is polycrystalline.A good saturated hysteresis loop coude be obtained from the SRO/BFMO/SRO ferroelectric capacitor at 5 kHz.The experiment results show that BFMO capacitor possesses very good fatigue-resistance.The leakage mechanism of the SRO/BFMO/SRO ferroelectric capacitor was studied.SRO/BFMO/SRO capacitor satisfied the ohmic conduction behavior at applied fields lower than 210 kV/cm and bulk-limited space-charge-limited conduction（SCLC） at the applied fields higher than 210 kV/cm.

关 键 词：BiFe0.95Mn0.05O3 NI-AL 阻挡层 漏电机制 

分 类 号：O646.1[理学—物理化学]