线性化AlGaN/GaN HEMT费米能级与二维电子气密度关系的解析模型  

Simplification of Non-Linear Dependence of Fermi Level on 2D Electron Gas Density in AlGaN/GaN High Electron Mobility Transistors

作　　者：卢盛辉[1] 杜江锋[1] 周伟[1] 夏建新[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《真空科学与技术学报》2011年第2期225-228,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家自科学基金资助项目(60576007)

摘　　要：通过化简复杂非线性的费米能级EF与二维电子气密度ns关系,并利用化简后函数的一阶泰勒多项式建立了线性化AlGaN/GaN HEMT中EF与ns关系的解析模型。该模型可以根据二维电子气密度ns的范围及温度计算EF与ns非线性关系之线性近似的参数斜率a和截距EF0。计算结果表明,所述模型的线性EF-ns计算结果对非线性精确解近似效果较好,且基于该模型计算的ns-VG曲线与实验数据符合良好。Here we addressed the approximation and simplification of the nonlinear relation between Fermi level,EF,and the two-dimensional electron density,ns,in AlGaN/GaN high electron mobility transistors（HEMTs）.First,the complicated nonlinear dependence of EF on ns was approximated by the first-order Taylor polynomial of the simplified EF（ns）.Then,the slope,a,and the intercept,EF0,in the approximated equation can be derived in terms of the ns range and temperature on the basis of the newly-developed approximation.For comparison,the EF（ns） was calculated in the simplified linear relation and in the original nonlinear dependence.Good agreement was found between these two sets of data.In addition,the measured ns-Vg plots confirmed the validity of the newly-developed simplification.

关 键 词：铝镓氮/氮化镓高电子迁移率晶体管 费米能级 线性近似 二维电子气 

分 类 号：TN386.2[电子电信—物理电子学]