SRAM单粒子效应监测平台的设计  

Design of SRAM Single Event Effect Monitoring System

作　　者：高山山[1,2] 苏弘[1] 孔洁[1,2] 千奕[1] 童腾[1,2] 张战刚[1,2] 刘杰[1] 侯明东[1] 孙友梅[1] 

机构地区：[1]中国科学院近代物理研究所,甘肃兰州730000 [2]中国科学院研究生院,北京100049

出　　处：《核电子学与探测技术》2011年第2期209-213,共5页Nuclear Electronics & Detection Technology

基　　金：中国科学院知识创新工程重要方向项目(KJCX2-YW-N27;YFKJCX3-SYW-N5)

摘　　要：SRAM单粒子效应监测平台用于兰州重离子加速器(HIRFL)辐照终端开展单粒子效应实验,采用"承载子板—主控制板—上位机"结构。简要分析了SRAM单粒子效应产生机理,详细描述了该平台的硬件系统、软件系统和性能指标。重离子辐照实验中,该平台多次检测到IDT71256发生单粒子翻转和单粒子闩锁,实验结果与理论分析的结论基本一致。The SRAM single event effect monitoring system,which is composed of a daughter board,a mother board and a control computer,is used for single event effect experiments in Irradiation Terminal of the Heavy Ion Research Facility in Lanzhou（HIRFL）.It briefly analysis single event effect in SRAM,and then describe hardware components,software system and performance index in details.This system have detected single event upset and single event latch-up of IDT71256 many times in radiation experiments,and the experimental data are basically consistent with expectations,verifying the reliability of this system.

关 键 词：SRAM 单粒子翻转 单粒子闩锁 重离子 

分 类 号：TN78[电子电信—电路与系统]