退火对ZnO薄膜结构及缺陷的影响  

Influence of Annealing on Structure and Defects of ZnO Thin Films

作　　者：解群眺[1] 毛世平[2] 薛守迪[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054 [2]中国电子科技集团公司第26研究所,重庆400060

出　　处：《压电与声光》2011年第2期299-301,319,共4页Piezoelectrics & Acoustooptics

基　　金："九七三"计划基金资助项目(51363Z04)

摘　　要：采用射频反应磁控溅射法在Si(111)基片上制备了高度c轴择优取向的ZnO薄膜,采用X线衍射(XRD)、X线光电子能谱(XPS)分析方法研究了退火对ZnO薄膜结构及缺陷的影响。结果表明,随着退火温度的上升,薄膜的择优取向及取向一致性更好,晶化程度增高,晶粒尺寸变大。退火使更多的Zn间隙原子回到晶格位置,并弥补薄膜中氧的不足,且高温退火易引起氧的解析,三者相互作用使晶面间距随着退火温度的上升而逐渐变小,压应力变大,ZnO中的O含量逐渐减少,Zn/O的原子比逐渐接近于1。Highly c-axis oriented ZnO thin film was manufactured by RF reactive magnetron sputtering technique on Si（111） substrates.The influence of the annealing on the microstructure and defects of ZnO thin films was studied by X-ray diffraction（XRD） and X-ray photo electron spectroscopy（XPS）.It＇s showed that with the rise of annealing temperature the preferred crystalline orientation and orientation consistency became better,the crystallization degree and the grain size increased.Zn interstitial atoms returned to lattice positions to supply the lack of oxygen in films and the oxygen in ZnO decomposed easily especially when the temperature was high by means of the annealing process.Then the interplanar distance became smaller with the increase of the annealing temperature;the oxygen content in ZnO thin films became less;the compressive stress became larger and the ratio of Zn to O atoms was more and more closed to 1.

关 键 词：ZNO薄膜 退火温度 X线衍射(XRD) X线光电子能谱(XPS) 

分 类 号：TN65[电子电信—电路与系统]