不同沉积温度下V掺杂的TiN薄膜的结构和性能  

The structure and properties of V doped TiN films prepared at various temperatures

作　　者：吴玲[1] 赵高凌[1] 段钢锋[1] 汪建勋[1] 韩高荣[1] 

机构地区：[1]浙江大学材料科学与工程系硅材料国家重点实验室,浙江杭州310027

出　　处：《功能材料》2011年第4期643-645,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50672086)

摘　　要：利用常压化学气相沉积法(APCVD)在玻璃基板上沉积制备了钒(V)掺杂的氮化钛(TiN)薄膜。利用X射线衍射仪(XRD)、光电子能谱仪(XPS)、扫描电子显微镜(SEM)、四探针电阻仪和分光光度计等对TiN薄膜的结构、形貌、以及光电性能进行了分析。结果表明,薄膜呈典型的粒状结构。随着沉积温度的升高,薄膜的结晶强度不断增加,薄膜中V元素的比例增大,方块电阻逐渐降低。600℃时薄膜在近红外光区的反射率接近50%,在中远红外区的反射率达到93.74%,得到了兼具阳光控制功能和低辐射功能的V掺杂的TiN镀膜玻璃。Vanadium（V） doped titanium nitride（TiN） films were prepared by the atmospheric pressure chemical vapor deposition process in glass substrates.The effect of the deposition temperature on the structure,morphology,electrical and optical properties of the films were investigated by X-ray diffraction（XRD）,optoelectronic spectrometer（XPS）,field emission scanning electron microscope（SEM）,four point probe and ultraviolet-visible spectrometer.The results showed that the films were typical of granular structure.With increasing deposition temperature,the crystallinity improved,the proportion of V increased and the sheet resistance decreased.When the temperature is 600℃,the reflectivity of V doped TiN film in the near-infrared and medium-far infrared region are 50% and 93.74% respectively.We obtained TiN coating glass with both sunlight control function and low radiation function.

关 键 词：APCVD 沉积温度 掺钒 氮化钛 结构和性能 

分 类 号：TQ134[化学工程—无机化工]