高压GaAs微型太阳电池阵列的制备  

Fabrication of High Voltage GaAs Micro-Solar Cell Arrays

作　　者：白一鸣[1] 陈诺夫[1,2] 王彦硕[2] 王俊[3] 黄添懋[2] 汪宇[2] 张兴旺[2] 尹志刚[2] 张汉[2] 吴金良[2] 姚建曦[1] 

机构地区：[1]华北电力大学新能源与可再生能源北京市重点实验室,北京102206 [2]中国科学院半导体研究所材料重点实验室,北京100083 [3]中国科学院半导体研究所光电子器件国家工程中心,北京100083

出　　处：《微纳电子技术》2011年第4期220-224,247,共6页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(61006150,61076051);国家重点基础研究发展计划(973计划)资助项目(2010CB933800);北京市自然基金资助项目(2102042);中央高校基本科研业务费专项资金资助项目(10QG24)

摘　　要：为了提高GaAs微型太阳电池的输出性能,对微型太阳电池阵列的主要工艺进行了研究和改进。通过对帽层、背电极层和台面的选择性/非选择性湿法腐蚀工艺的探索,实现了对最佳腐蚀液的配比、腐蚀时间和温度的控制。采用侧壁钝化工艺和聚酰亚氨(PI)/SiO2/TiAu/SiO2新型互连结构,不仅确保了电池单元之间有效的隔离和互连,而且极大地降低了侧壁载流子复合电流,同时这种新型互连结构可有效防止由于衬底光敏现象引起的漏电流。经过上述器件工艺改进,获得了高集成度GaAs微型太阳电池阵列。电流-电压(JSC-VOC)测试结果显示,器件的开路电压达到84.2V,填充因子为57%。The main fabrication processes were investigated and improved in order to improve the output performance of GaAs micro-solar cells.The selective/unselective etching was carried out for the cap layer,back cathode layer and mesa of the cell,and the control of the optimum et-ching solution ratio,etching time and temperature was obtained by exploring the wet etching process.The sidewall passivation process and the novel interconnected structure of polymide（PI）/SiO2/TiAu/SiO2 were proposed to ensure the effective insulation and interconnection be-tween the cell units,greatly reduce the carriers recombination current of the sidewall and prevent the substrate leakage current due to the photosensitivity of the SI-GaAs substrate.By improving the fabrication technology mentioned above,the GaAs micro-solar cell array with high integration level was fabricated.The result of the current-voltage measurement shows that the open-circuit voltage of 84 V and the fill factor of 57% were achieved.

关 键 词：微型电源 GAAS太阳电池 漏电流 湿法腐蚀工艺 互连结构 

分 类 号：TM914.4[电气工程—电力电子与电力传动]