影响AlGaN/GaN HFET器件二维电子气的若干因素  

Factors Affecting the Two-Dimensional Electron Gas in AlGaN/GaN HFET Devices

作　　者：张明华[1] 林兆军[2] 李惠军[1] 申艳芬[1] 魏晓珂[1] 刘岩[1] 

机构地区：[1]山东大学信息科学与工程学院,济南250100 [2]山东大学物理微电子学院,济南250100

出　　处：《微纳电子技术》2011年第4期225-229,共5页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(10774090)

摘　　要：基于Sentaurus Workbench(SWB)TCAD可制造性设计平台进行AlGaN/GaN器件的结构设计和仿真,并对影响二维电子气的重要参数因素进行了研究及优化,诸如AlGaN势垒层中Al组分x、AlGaN势垒层厚度h、应变弛豫度r和栅偏压Vg等因素。参数相关性的制约结果,无疑会反映在对器件物理特性的制约及影响上。研究结果表明,在一定条件下增大势垒层中Al组分和势垒层厚度可以提高器件的电流传输特性。然而随着二者的不断增大将会引起应变弛豫的发生,而应变弛豫的发生会降低器件的性能。The structure design and simulation of the AlGaN/GaN device were carried out based on the TCAD simulation platform-Sentaurus Workbench（SWB）,and the influence of the crucial parameters on the two-dimensional electron gas（2DEG）was discussed and optimized.The parameters related to the structure and technology of the AlGaN/GaN device include the Al component（x）in the AlGaN barrier layer,the thickness（h） of the AlGaN barrier layer,the strain relaxation degree（r）and the gate bias voltage（Vg）,etc.It is no doubt that the correlation among the parameters would impact the device physical characteristics.The simulation results show that the current transfer characteristic of the device can be improved through increa-sing the Al component and the thickness of the AlGaN barrier layer,which will lead to the strain relaxation,thus the device performance will be degraded.

关 键 词：ALGAN/GAN 异质结场效应晶体管(HFET) 二维电子气(2DEG) 自发极化 压电极化 

分 类 号：TN325.3[电子电信—物理电子学]