应用高压高功率的微晶硅薄膜高速沉积  

High rate deposition of microcrystalline silicon thin films under high pressure and high power

作　　者：赵之雯[1,2] 刘玉岭[1] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]天津职业技术师范大学电子工程学院,天津300222

出　　处：《光电子．激光》2011年第4期555-557,共3页Journal of Optoelectronics·Laser

基　　金：国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308);高等学校博士学科点专项科研基金资助项目(20050080007)

摘　　要：应用高压高功率(hphP)甚高频等离子增强化学气相沉积(VHF-PECVD)法对微晶硅(μc-Si:H)进行高速沉积,确定了hphP VHF-PECVD法沉积μc-Si:H的最优条件参数,在此参数下对hphP和低压低功率(lplP)两组样品沉积速率、光电导、暗电导及光敏性等性能参数进行测试,得到了1.58 nm的较高沉积速率、光电性能优秀和更适合应用在薄膜太阳能电池生产上的μc-Si:H薄膜材料。In this paper,the high rate deposition of microcrystalline silicon thin films is achieved by very high frequency plasma enhanced chemical vapor deposition（VHF-PECVD） working at high pressure and high power（HPHP）.The best deposition parameters are determined.Under these deposition parameters,the HPHP films show better optical and electrical properties.The deposition rate,photo-conductivity,dark conductivity and photo-sensitivity are tested.The results show that the way of depositing microcrystalline silicon thin films is more suitable for manufacturing the solar cells with outstanding optical and electrical properties.And the deposition rate is 1.58 ns.

关 键 词：微晶硅(μc-Si:H)薄膜 高压高功率(hphP)甚高频等离子增强化学气相沉积(VHF-PECVD) 高速沉积 

分 类 号：O782[理学—晶体学]