溅射功率对NiO薄膜性质的影响  

Influence of Sputtering Power on Properties of NiO Thin Film

作　　者：王新[1] 刘楠[1] 向嵘[1] 李野[1] 端木庆铎[1] 田景全[1] 

机构地区：[1]长春理工大学理学院,吉林长春130022

出　　处：《液晶与显示》2011年第2期158-160,共3页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金(No.11004016);吉林省科技厅基金(No.20080170)

摘　　要：在室温条件下,采用射频磁控溅射的方法在石英衬底上制备了NiO薄膜,深入研究了不同溅射功率对NiO的结构、光学和电学特性的影响。随着溅射功率的升高,NiO薄膜逐渐由非晶态薄膜转变成具有(111)择优取向的晶态薄膜,同时发现NiO薄膜在可见光区透过率较大,而在紫外光区透过率减小;随着溅射功率的升高,薄膜在可见光区域和紫外区域的光学透过率均明显减小,同时禁带宽度也减小,但导电性增强。The nickel oxide thin films were deposited on quartz substrate by radio-frequence magnetron sputtering method at room temperature,and the influence of sputtering power on the structural,optical and electrical properties of NiO thin film were mainly discussed.With the increasing of sputtering power,the NiO thin film with amorphous structure changed into crystalline one with（111） preferred orientation.It was also found that transmittance of NiO thin film in visible region is larger than that in ultraviolet（UV） region.With the increasing of sputtering power,the transmittance in both the visible region and the UV region decreased,the bandgap increased and the conductivity decreased.

关 键 词：射频磁控溅射 氧化镍 结构 光学 电学 

分 类 号：TB34[一般工业技术—材料科学与工程]