SI-GaAs材料的电学补偿  

Electricity Compensation of Semi-Insulating GaAs

作　　者：赖占平[1] 齐德格[1] 高瑞良 杜庚娜 刘晏凤 刘建宁 

机构地区：[1]电子工业部第四十六研究所,天津300220

出　　处：《Journal of Semiconductors》1999年第11期999-1003,共5页半导体学报（英文版）

基　　金："九五"攻关项目

摘　　要：研究了ＨＰＬＥＣ工艺生长半绝缘砷化镓单晶过程中，熔体的化学剂量比对晶体深施主缺陷能级、浅受主碳的浓度以及晶体电学性能的影响．由Ｎ 型半绝缘晶体的补偿机理对实验现象进行了解释，给出了既能保证晶体电学性能又可以使缺陷浓度较低的最佳熔体剂量比．并将近本征半导体的物理模型推广至半绝缘砷化镓单晶，得到了较理想的电阻率范围．The effects of the stoichiometry of GaAs melt on El\-2 concentration, carbon content and electrical properties of semi\|insulating GaAs crystal grown by HPLEC technology have been researched. The experimental results are explained by using the compensation mechanism of semi\|insulating GaAs and the optimal melt stoichiometry is given which meets the needs of good electric parameters and low defect density. The physical model for near intrinsic semiconductor is also applied to semi\|insulating GaAs crystal and the ideal resistivity range of SI\|GaAs have been deduced.

关 键 词：SI-GAAS材料 电学补偿 砷化镓 半导体材料 

分 类 号：TN304.23[电子电信—物理电子学]