图形衬底上硅区双离子束选择淀积Co研究  

Selective Deposition of Cobalt on Patterned Substrate by Dual Ion Beams Techniques

作　　者：吴正龙[1] 姚振钰[2] 刘志凯[2] 张建辉[2] 秦复光[2] 林兰英[2] 

机构地区：[1]北京师范大学分析测试中心,北京100875 [2]中国科学院半导体研究所半导体材料科学实验室,北京100083

出　　处：《Journal of Semiconductors》1999年第11期1010-1014,共5页半导体学报（英文版）

基　　金：八五攻关研究项目

摘　　要：本文报道了利用质量分离低能双离子束淀积法在硅氧化硅图形衬底上采用不同的工艺条件淀积钴（Ｃｏ）离子，并生长硅化钴薄膜．扫描俄歇微探针（ＳＡＭ）和Ｘ光电子能谱（ＸＰＳ）测量结果表明，只在纯硅区探测到了硅化钴；而氧化硅区始终未见有钴的迹象．很好地实现了在图形衬底上钴离子的选择淀积和硅化钴薄膜的选择生长．A study of selective growth of cobalt silicide film on silicon\|silica patterned substrate by means of dual ion beams deposition(IBD) is reported.The Auger electron spectroscopy,scanning Auger microprobe (SAM) and X\|ray photoelectron spectroscopy (XPS) are carried out,and their measuring results reveal that the cobalt is only deposited on the pure silicon regions of the patterned substrate,but no signal of Co exists in the silica regions of the substrate.The selective deposition and growth of cobalt silicide film is realized in this work.

关 键 词：金属硅化物 离子束淀积 钴 硅-氧化硅 

分 类 号：TN304.21[电子电信—物理电子学]