深亚微米半导体器件模拟方法的分析与设计  

Analysis and Design for Deep Submicron Semiconductor Device Simulation

作　　者：吴金[1] 杨廉峰[1] 那斯尔江 刘其贵 魏同立 

机构地区：[1]东南大学微电子中心,南京210096

出　　处：《固体电子学研究与进展》1999年第4期382-392,共11页Research & Progress of SSE

基　　金：江苏省自然科学基金!(BK97007);国家自然科学基金!(69806002)

摘　　要：对半导体器件模拟软件系统的构造进行了全面系统的分析，对所涉及到的关键问题进行了深入讨论。研究了适合于深亚微米半导体器件的流体动力学模型的物理实质、相互关系和选取原则，总结了非线性偏微分方程组系统的离散技术，提出了可行的迭代求解算法与方法，完成了面向对象的模拟软件结构分析与系统设计，初步探讨了基于ＣＯＲＢＡThe configurations of modern semiconductor device simulation system with the major key factors that concerned are fully analyzed and discussed in this paper. The physical essence, relationships and applications of the different Hydrodynamic Transportation Models are presented, and the discretization schemes for nonlinear partial differential equations as well as the possible iteration methods for the larger sparse matrix equation are proposed. Finally, the systematic analysis and design of the object oriented simulation software are achieved, and the implementation procedure and the validity of parallel calculation under the CORBA platform are further considered.

关 键 词：半导体器件 面向对象 CORBA 深亚微米 

分 类 号：TN303[电子电信—物理电子学] TN302