带电平位移电路的H桥高端功率管栅极驱动电路  

Gate Drive Circuit for H-Bridge High-Side Power MOSFETs with High Voltage Level Shifter

作　　者：向莉[1] 方健[1] 黎育煌[1] 

机构地区：[1]电子科技大学IC设计中心,成都610054

出　　处：《微电子学》2011年第2期207-210,共4页Microelectronics

摘　　要：提出了一种带高压电平位移电路的H桥高端功率管栅极驱动电路。电平位移电路采用脉冲下拉方式实现高压电平位移,与一般的方波下拉方式相比,有效地减小了电路的功耗。分析了脉冲下拉方式电平位移电路的工作原理与实现方式,以此为基础,设计了H桥高端驱动电路。基于5μm高压BCD工艺,采用Spectres进行电路仿真,完成了电路版图设计和流片测试。结果显示,设计的高端驱动电路能很好地实现高端功率管栅极电位的悬浮抬升。A gate drive circuit with level shifter was proposed for H-bridge high-side power MOSFETs.In the level shifter,pulse-down mode was used to implement high voltage level shift,which,compared with conventional square-wave down mode,effectively reduced power of the circuit.Structure of the circuit and its operational principle were analyzed,and a gate drive circuit for H-bridge high-side power MOSFETs was designed.The circuit was simulated with Spectres based on 5 μm BCD process,and layout was made with Virtuoso.Test results showed that the proposed circuit could increase gate voltage of the high-side MOSFET,and properly turn on and off the high side power MOSFET.

关 键 词：栅极驱动 电平位移 H桥 BCD工艺 高端功率管 

分 类 号：TN433[电子电信—微电子学与固体电子学]