衬底温度对PLD法制备的ZnO:Ga薄膜结构和性能的影响  

Effect of substrate temperature on structure and properties of ZnO:Ga thin films by pulsed laser deposition

作　　者：王书昶[1] 张春伟[1] 刘振华[1] 刘拥军[1] 何军辉[1] 

机构地区：[1]扬州大学物理科学与技术学院,江苏扬州225002

出　　处：《电子元件与材料》2011年第5期23-25,34,共4页Electronic Components And Materials

基　　金：江苏省科技厅工业支撑项目资助(No.BE2009106)

摘　　要：利用脉冲激光沉积法在石英衬底上制备了镓掺杂氧化锌(ZnO:Ga)透明导电薄膜,研究了衬底温度对薄膜的结构、表面形貌和光电性能的影响。研究表明:制备的ZnO:Ga薄膜是具有六角纤锌矿结构的多晶薄膜。随着衬底温度的增加,衍射峰明显增强,晶粒尺寸增大。当衬底温度为450℃时,薄膜的最低电阻率为8.5×10–4Ω.cm,在可见光区平均光透过率达到87%以上。Gallium doped zinc oxide（ZnO： Ga） thin films were deposited on quartz substrates by pulsed laser deposition.The effects of substrate temperature on the structure,surface morphology and photoelectric properties of the ZnO：Ga thin films were investigated.The obtained thin films possess a polycrystalline hexagonal wurtzite structure.With the increase of substrate temperature,the intensity of diffraction peaks increases significantly and the grain size increases.The lowest resistivity is 8.5×10–4 Ω·cm and the transmittance in the visible range is over 87% for the prepared ZnO：Ga thin films when the substrate temperature is 450 ℃.

关 键 词：脉冲激光沉积 ZnO:Ga薄膜 衬底温度 光电性能 

分 类 号：O484.4[理学—固体物理]