高压高功率VHF-PECVD的微晶硅薄膜高速沉积  

High rate deposition of microcrystalline silicon thin films by VHF-PECVD

作　　者：赵之雯[1,2] 刘玉岭[1] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]天津职业技术师范大学电子工程学院,天津300222

出　　处：《光电子．激光》2011年第5期722-724,共3页Journal of Optoelectronics·Laser

基　　金：国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308);高等学校博士学科点专项科研基金资助项目(20050080007)

摘　　要：采用高压高功率(hphP)甚高频等离子体强强化学气相沉积(VHF-PECVD)法对微晶硅(μc-Si:H)进行高速沉积,在最优沉积条件参数下对hphP和低压低功率(lplP)两组样品沉积速率、光电导、暗电导及光敏性等性能参数进行测试,得到了1.58 nm/s的较高沉积速率、光电性能优秀和更适合薄膜太阳能电池的μc-Si:H薄膜材料。Microcrystalline silicon（μc-Si：H） is commonly regarded as the next generation material for Si-based thin film solar cell.In this paper,we achieved high rate deposition of microcrystalline silicon thin films by VHF-PECVD working at high pressure and high power（hphP）.Determine the best deposition parameters.Under these deposition parameters,the hphP films showed better optical and electrical properties.The deposition rate,photoconductivity dark conductivity,photosensitivity were tested.The result showed that we got a way of depositing microcrystalline silicon thin films which is more suitable for manufacturing the solar cells with outstanding optical and electrical properties.And the deposition rate is 15.8 nm/s.

关 键 词：微晶硅(μc-Si:H)薄膜 高压高功率(hphP)VHF-PECVD 高速沉积 

分 类 号：O782[理学—晶体学]