1.2～1.4GHz 300W宽带硅大功率双极晶体管研制  

Research and Manufacture of 1.2-1.4 GHz 300 W Broadband Silicon High Power Transistors

作　　者：徐守利[1] 刘英坤[1] 黄雒光[1] 胡顺欣[1] 邓建国[1] 潘茹[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2011年第5期355-358,共4页Semiconductor Technology

摘　　要：介绍了L波段300 W宽带硅微波脉冲大功率晶体管研制结果。采用大面积亚微米精细线条阵列加工技术、深亚微米浅结制备工艺技术、均匀热分布技术、双层金属化技术等工艺技术,研制出了L波段300 W宽带硅微波脉冲大功率晶体管。器件在1.2~1.4 GHz频带内,脉冲宽度150μs,占空比10%,工作电压40 V条件下,全频带内输出功率大于300 W,功率增益大于8.75 dB,集电极效率大于55%,并具有良好的可靠性。The research results of the L-band 300 W broadband silicon microwave pulse high power transistors were introduced.The transistor was developed with the process and technology of the manufacturing large area submicron fine pattern array,deep submicron shallow junction,uniform thermo-distribution and double-layer metallization.The results show that the output power is over 300 W,the power gain is more than 8.75 dB and the collector efficiency is more than 55% at 1.2-1.4 GHz,under the conditions of 40 V supply voltage,150 μs pulse width and 10% duty cycle.The device has high reliability.

关 键 词：硅 L波段 微波脉冲 功率晶体管 亚微米 

分 类 号：TN322.8[电子电信—物理电子学] TN323.4