生长压力对MOCVD GaN材料晶体质量的影响  

Influence of Growth Pressure on the Crystalline Quality of GaN by MOCVD

作　　者：彭大青[1] 李忠辉[1] 李亮[1] 孙永强[1] 李哲洋[1] 董逊[1] 张东国[1] 

机构地区：[1]单片集成电路与模块国家级重点实验室南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2011年第2期107-110,共4页Research & Progress of SSE

摘　　要：使用氮化物MOCVD外延生长系统,采用传统的两步生长法在76.2 mm c面蓝宝石衬底上生长了不同压力的GaN薄膜样品。研究发现提高高温GaN的生长压力,初期的三维生长时间增长,有利于提高GaN薄膜的晶体质量。同时采用XRD、PL谱和湿化学腐蚀方法研究了样品的位错特性,结果表明高压生长的样品能够降低位错密度,起到改善GaN晶体质量的作用。GaN films were grown on 76.2 mm c-plane sapphire substrate with two-step method by MOCVD system.We found that raising the growth pressure increased the initial three-dimension growth time.Photoluminescence（PL） spectra,X-ray diffraction and wet chemical etching method were used to research the dislocation property of the samples.The results indicated that the sample had lower density of dislocation with higher growth pressure which illustrated that high growth pressure is useful to improve the crystalline quality of GaN film.

关 键 词：金属有机化合物化学气相淀积 氮化镓 生长压力 位错 

分 类 号：TN304[电子电信—物理电子学] TN304.055