磁控溅射与电弧离子镀制备TiN薄膜的比较  

Comparison of TiN films prepared by magnetron sputtering and arc ion plating

作　　者：李鹏[1] 黄美东[1] 佟莉娜[1] 张琳琳[1] 王丽格[1] 李晓娜[2] 

机构地区：[1]天津师范大学物理与电子信息学院,天津300387 [2]大连理工大学三束重点实验室,辽宁大连116024

出　　处：《天津师范大学学报（自然科学版）》2011年第2期32-37,共6页Journal of Tianjin Normal University：Natural Science Edition

基　　金：国家自然科学基金资助项目(61078059);天津师范大学学术创新推进计划资助项目(52X09038)

摘　　要：分别采用磁控溅射和电弧离子镀在抛光后的W18Cr4V高速钢基体表面沉积TiN膜层,利用纳米力学系统、扫描电子显微镜(SEM)和X射线衍射仪(XRD)对薄膜进行测试,比较了两种方法所制备的薄膜的异同.结果表明:磁控溅射所制备的薄膜表面平整,但沉积速率和硬度均低于电弧离子镀制备的薄膜.TiN films were deposited onto the well-polished W18Cr4V by DC magnetron sputtering and arc ion plating,respectively.Both advantages and shortcomings of these two methods were discussed according to the microstructure and properties of the films measured by nano-indenter,SEM,as well as XRD.It was concluded that the films prepared by magnetron sputtering had cleaner surfaces but less deposition rate as well as lower hardness,when compared with those deposited by arc ion plating.

关 键 词：TIN 磁控溅射 电弧离子镀 

分 类 号：O484.4[理学—固体物理]