负偏压对反应磁控溅射AlN薄膜的影响  

Influence of negative bias on properties of aluminum nitride thin films prepared by reactive magnetron sputtering

作　　者：张琳琳[1] 黄美东[1] 李鹏[1] 王丽格[1] 佟莉娜[1] 

机构地区：[1]天津师范大学物理与电子信息学院,天津300387

出　　处：《天津师范大学学报（自然科学版）》2011年第2期38-41,共4页Journal of Tianjin Normal University：Natural Science Edition

基　　金：国家自然科学基金资助项目(61078059);天津师范大学推进计划资助项目(52X09038)

摘　　要：利用反应磁控溅射制备AlN薄膜,研究了基底负偏压对薄膜结构及其性能的影响.XRD和SEM结果表明:用此方法获得的AlN薄膜呈晶态,负偏压对AlN择优取向产生一定的影响,随着偏压的增大,薄膜表面晶粒尺寸有长大趋势.根据透射谱测试和包络线计算结果可知,薄膜在可见光和红外区域透射率高,随着偏压的增大,薄膜的折射率也随之增大.Aluminum nitride（AlN） films have been prepared by reactive magnetron sputtering technique at different bias voltage.The microscopy structures and properties of the films have been studied by X-ray diffraction（XRD）,scanning electron microscopy（SEM） and optical spectroscopy.The results indicate that the films are crystalline,the bias voltage influences the orientation of the crystallites.The size of crystallites becomes larger with the increase of bias,and the indexes of AlN thin films become larger,too.

关 键 词：ALN薄膜 基底负偏压 反应磁控溅射法 

分 类 号：O484.4[理学—固体物理]