Ti/4H-SiC肖特基势垒二极管抗辐射特性的研究  

Radition effect on Ti/4H-SiC SBD of gamma-ray,electrons and neutrons

作　　者：张林[1,2] 肖剑[1,2] 邱彦章[1,2] 程鸿亮[1,2] 

机构地区：[1]长安大学电子与控制工程学院 [2]长安大学道路交通检测与装备工程技术研究中心,西安710064

出　　处：《物理学报》2011年第5期545-549,共5页Acta Physica Sinica

基　　金：西安市科技计划项目(批准号:CXY1012);中央高校基本科研业务费专项资金(批准号:CHD2010JC054)资助的课题~~

摘　　要：本文采用γ射线、高能电子和中子对Ti/4H-SiC肖特基势垒二极管(SBD)的抗辐射特性进行了研究.研究发现对于γ射线和1MeV电子辐照,-30V辐照偏压对器件的辐照效应没有明显的影响.经过1Mrad(Si)的γ射线或者1×l013n/cm2的中子辐照后,Ti/4H-SiC肖特基接触都没有明显退化;经过3.43×1014e/cm2的1MeV电子辐照后Ti/4H-SiC的势垒高度比辐照前轻微下降,这是由于高能电子引入的电离损伤造成的,且可以在常温下退火恢复.分别经过1Mrad(Si)的γ射线和3.43×1014e/cm2的电子辐照后,器件反向电流的变化都比较轻微,显示了良好的抗辐射特性.实验同时还发现电子和中子辐照会造成器件串联电阻增加.The Ti /4H-SiC Schottky barrier diodes（SBDs） were irradiated at room temperature with 60 Co gamma-ray source,1MeV electrons and neutrons,and 0V and-30 V bias voltage were applied to the diodes during gamma-ray and electron radiation.The meaurement results show that-30 V radiation bias voltage has no influence on the radiation effect of the diodes.After 1 Mrad（Si） gamma-ray and 1 × 1013 n /cm2neutron radiation respectively,the Schottky barrier height of the diodes basically remain the same values.After an electron dose of 3.43 × 1014 e /cm2,Schottky barrier height of the diodes slightly decreased,which was caused by ionizing damage of high energy electron,and recovered completely after annealing at room temperture.After gamma-ray and electron radiation,the reverse current of Ti /4H-SiC SBD had no obviously degration.The on-state resistance of the diodes increased after electron and neutron radiaiton.

关 键 词：碳化硅 肖特基 辐照 偏压 

分 类 号：TN311.7[电子电信—物理电子学]