二氧化硅溶胶的制备及其对硬盘基板NiP的抛光速率研究  

Preparation of Silica Sol and Its Application in Polishing NiP Substrate of Computer Hard-disk

作　　者：孙涛[1] 

机构地区：[1]天津工业大学环境与化学工程学院,天津300160

出　　处：《辽宁化工》2011年第5期449-450,482,共3页Liaoning Chemical Industry

摘　　要：离子交换法制备了不同粒径的纳米二氧化硅溶胶,采用TEM、DLS等手段对磨料进行了表征,并以二氧化硅溶胶作为磨料对存储器硬盘基板NiP进行化学机械抛光实验,考察了磨料粒径和数量等因素对存储器硬盘基板NiP的抛光去除速率的影响。Colloidal silica with different particle size was prepared by ion-exchange method.The particles were characterized by TEM and DLS.Using silica sol as abrasive,the chemical mechanical polishing experiment for NiP substrate of computer hard-disk was carried out.Effect of particle size and particle numbers on polishing removal rate was analyzed.

关 键 词：硅溶胶 磨料 硬盘 化学机械抛光 去除速率 

分 类 号：TQ127.2[化学工程—无机化工]