GaP∶NLPE片的纵向载流子浓度分布  

Carrier Concentration Profiles of GaP∶N LPE Wafers

作　　者：李桂英[1] 刘荣寰[2] 杨锡震 王亚非 桑丽华[3] 

机构地区：[1]北京师范大学分析测试中心,北京100875 [2]中国科学院半导体研究所 [3]北京师范大学物理系,北京100875

出　　处：《稀有金属》1999年第6期471-473,共3页Chinese Journal of Rare Metals

摘　　要：阐述了ＧａＰ∶ＮＬＰＥ片纵向载流子浓度分布的测量方法， 探讨了各层载流子浓度和载流子浓度分布对发光效率的影响。Abstract: By electrochemical C U measurment associated with chemical etching, the carrier concentration profiles in a batch of GaP∶N LPE samples made in China were measured. The relative luminances of the samples were also measured with electroluminescence and photoluminescence. A comparison between the two measurement results showed that, the carrier concentration in the first n type epilayer depends on the concentration of multi crystalline GaP mixed in the Ga solution, and the luminance increases with decreasing of the carrier concentration in the second n type epilayer.

关 键 词：GaP:NLPE 载流子 浓度分布 发光效率 

分 类 号：TN204[电子电信—物理电子学]