掺氮氧化钒薄膜的椭偏光谱表征  

Spectroscopic ellipsometry characterization of nitrogrn-doped vanadium oxide films

作　　者：李贺[1] 顾德恩[1] 王涛[1] 吴志明[1] 蒋亚东[1] 

机构地区：[1]电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《电子元件与材料》2011年第6期36-39,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.60806021)

摘　　要：利用反应溅射法,在Si（100）衬底上沉积了掺N氧化钒薄膜。借用SE850椭偏仪对薄膜进行了近红外波段（1 300~2 300 nm）的光谱测量,运用Tauc-Lorentz模型对薄膜的椭偏光谱数据进行了拟合,并计算了薄膜的光学参数（n,k）和厚度。结果表明：随着掺N量的增加,氧化钒薄膜的光学参数（n,k）随之增加,而其沉积速率则随之降低。这可能源于掺N增加了薄膜的致密度,同时减小了氧化钒的光学带隙。Nitrogen-doped vanadium oxide films were deposited on Si（100） substrates by reactive sputtering.The optical properties of the nitrogen-doped vanadium oxide films were studied with SE850 spectroscopic ellipsometry in the range of 1 300 nm to 2 300 nm（NIR band）.The measured ellipsometric spectra of the nitrogen-doped vanadium oxide films were fitted with the Tauc-Lorentz model,and the optical constants（n,k） as well as the thicknesses of the films were calculated.Increases in n,k and decreases in deposition rate of the films are observed with increasing N content.This is correlated to the higher packing density and the narrower optical band gap of the nitrogen-doped vanadium oxide films,resulting from nitrogen incorporation.

关 键 词：反应溅射 椭偏仪 氧化钒薄膜 掺氮 

分 类 号：TN304.055[电子电信—物理电子学]